| 摘要 |
PROBLEM TO BE SOLVED: To prevent a current from being leaked by an impurity semiconductor layer that is formed thin on an inclined plane of a contact hole which conductively connects a photoelectric conversion part and a TFT.SOLUTION: A photodetector comprises a plurality of detection parts 40 each including: a TFT 31 that is formed on one surface of a substrate 1; a photoelectric conversion part 30 which is laminated on the TFT 31 while interposing an insulation layer 8 therebetween; and a first contact hole 20 which conductively connects the photoelectric conversion part 30 and a drain electrode 4b of the TFT 31. The photoelectric conversion part 30 is configured by laminating a first electrode layer 9, a first impurity semiconductor layer 10, an intrinsic semiconductor layer 11, a second impurity semiconductor layer 12 and a second electrode layer 13 from a side of the TFT 31. For the first contact hole 20, an inclination angle of the inclined plane to a surface in parallel with one surface of the substrate 1 is 30° or less.SELECTED DRAWING: Figure 1 |
