A thin film transistor (TFT) substrate comprises: a plastic insulation substrate; a first silicon nitride layer with a first refractive index, formed one surface of the plastic insulation substrate; and a TFT comprising a second silicon nitride layer formed with a second refractive index smaller than the first refractive index on the first silicon nitride layer. Thus, the present invention provides a TFT substrate wherein there is reduced a problem in that thin films are lifted from a plastic insulation substrate.
申请公布号
KR20070043488(A)
申请公布日期
2007.04.25
申请号
KR20050099824
申请日期
2005.10.21
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
LEE, WOO JAE;HONG, MUN PYO;KIM, BYOUNG JUNE;YANG, SUNG HOON