发明名称 Fabrication of MEMS devices with spin-on glass
摘要 <p>A method of making an etched structure in the fabrication of a MEMS device involves depositing a bulk layer, typically of polysilicon, prone to surface roughness. At least one layer of photo-insensitive spin-on planarizing material, such as silicate-based spin-on glass, is formed on the bulk layer to reduce surface roughness. This is patterned with a photoresist layer. A deep etch is then performed through the photoresist layer into the bulk layer. This technique results in much more precise etch structures. <IMAGE></p>
申请公布号 EP1400488(B1) 申请公布日期 2007.04.25
申请号 EP20030102638 申请日期 2003.08.22
申请人 DALSA SEMICONDUCTOR INC. 发明人 OUELLET, LUC
分类号 B81C1/00;G03F7/09;H01L21/3213 主分类号 B81C1/00
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