| 摘要 |
To provide a superior capacitance detecting device, a capacitance detecting device includes M row lines and N column lines that are arranged in a matrix, capacitance detecting elements provided at intersections therebetween, and power lines. The capacitance detecting element includes a signal detecting element and a signal amplifying element. The signal detecting element includes a capacitance detecting electrode, a capacitance detecting dielectric film, and a reference capacitor. The signal amplifying element is composed of a thin film semiconductor device having a gate electrode, a gate insulating film, and a semiconductor film, and an electrode of the reference capacitor is connected to the row line. |
