POWERUP GENERNATION CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE FOR REDUCE INITIAL VALUE FAIL IN TEST,申请号KR20060032994-传众专利搜索

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发明名称	POWERUP GENERNATION CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE FOR REDUCE INITIAL VALUE FAIL IN TEST
摘要
申请公布号	KR100713934(B1)	申请公布日期	2007.04.25
申请号	KR20060032994	申请日期	2006.04.11
申请人	HYNIX SEMICONDUCTOR INC.	发明人	LEE, BYEONG CHEOL
分类号	G11C11/4074;G11C7/20	主分类号	G11C11/4074
代理机构		代理人
主权项
地址

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