Semiconductor Device and Method of Forming Shielding Layer over Integrated Passive Device Using Conductive Channels

摘要

A semiconductor device is made by providing a substrate, forming a first insulation layer over the substrate, forming a first conductive layer over the first insulation layer, forming a second insulation layer over the first conductive layer, and forming a second conductive layer over the second insulation layer. A portion of the second insulation layer, first conductive layer, and second conductive layer form an integrated passive device (IPD). The IPD can be an inductor, capacitor, or resistor. A plurality of conductive pillars is formed over the second conductive layer. One conductive pillar removes heat from the semiconductor device. A third insulation layer is formed over the IPD and around the plurality of conductive pillars. A shield layer is formed over the IPD, third insulation layer, and conductive pillars. The shield layer is electrically connected to the conductive pillars to shield the IPD from electromagnetic interference.

主权项

1. A method of making a semiconductor device, comprising:
providing a first substrate; forming a first conductive layer over the first substrate; forming an integrated passive device (IPD) over the first conductive layer; forming a first conductive pillar over the first conductive layer; and forming a second conductive layer over the first conductive pillar to shield the IPD from electromagnetic interference (EMI), wherein the second conductive layer is electrically coupled to the first conductive layer through the first conductive pillar.