发明名称 |
SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD OF FABRICATING THE SAME |
摘要 |
A method of fabricating a semiconductor device and a semiconductor device formed by the method. The method includes form a stack conductive structure by stacking a first conductive pattern and an insulation pattern over a substrate; forming a sacrificial pattern over sidewalls of the stack conductive structure; forming a second conductive pattern having a recessed surface lower than a top surface of the stack conductive structure; forming a sacrificial spacer to expose sidewalls of the insulation pattern by removing an upper portion of the sacrificial pattern; reducing a width of the exposed portion of the insulation patters; forming a capping spacer to cap the sidewalls of the insulation pattern having the reduced width over the sacrificial spacer; and forming an air gap between the first conductive pattern and the second conductive pattern by converting the sacrificial spacer to volatile byproducts. |
申请公布号 |
US2016197003(A1) |
申请公布日期 |
2016.07.07 |
申请号 |
US201615070700 |
申请日期 |
2016.03.15 |
申请人 |
SK hynix Inc. |
发明人 |
KIM Myung-Ok |
分类号 |
H01L21/768;H01L27/108;H01L21/285 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Gyeonggi-do KR |