发明名称 |
Method of manufacturing a semiconductor component |
摘要 |
An insulated gate field effect transistor having reduced gate-drain overlap and a method for manufacturing the insulated gate field effect transistor. A gate structure is formed on a major surface of a semiconductor substrate. A source extension region and a drain extension region are formed in a semiconductor material using an angled implant. The source extension region extends under the gate structure, whereas the drain extension region is laterally spaced apart from the gate structure. A source region is formed in the semiconductor substrate and a drain region is formed in the semiconductor substrate, where the source and drain regions are laterally spaced apart from the gate structure. A source-side halo region is formed in the semiconductor substrate adjacent the source extension region.
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申请公布号 |
US7208383(B1) |
申请公布日期 |
2007.04.24 |
申请号 |
US20020284651 |
申请日期 |
2002.10.30 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WEINTRAUB CHAD;BULLER JAMES F.;WRISTERS DERICK;CHEEK JON |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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