发明名称 Connection technology for power semiconductors comprising a layer of electrically insulating material that follows the surface contours
摘要 A layer of electrically insulating material is applied to a substrate and a component located thereon, in such a way that said layer follows the surface contours.
申请公布号 US7208347(B2) 申请公布日期 2007.04.24
申请号 US20040547173 申请日期 2004.01.26
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 SELIGER NORBERT;WEIDNER KARL;ZAPF JOERG
分类号 H01L21/44;H01L21/48;H01L21/50;H01L21/60;H01L23/538;H01L25/07 主分类号 H01L21/44
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