发明名称 On die termination circuit
摘要 The present invention discloses an on die termination circuit. The on die termination circuit used in a DDR2 employs transmission gates as pull-up and pull-down switches, equalizes pull-up and pull-down resistance values by changing connection relations between switches and resistors, and maintains a constant voltage of an input pin.
申请公布号 US7208973(B2) 申请公布日期 2007.04.24
申请号 US20040008043 申请日期 2004.12.09
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KWON DAE HAN
分类号 H03K17/16;G11C7/10;H03K5/12;H03K19/003;H03K19/094;H04L25/02 主分类号 H03K17/16
代理机构 代理人
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