| 发明名称 |
ULTRA-THIN OHMIC CONTACTS FOR P-TYPE NITRIDE LIGHT EMITTING DEVICES AND METHODS OF FORMING |
| 摘要 |
<p>A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25Åand a specific contact resistivity less than about 10−3 ohm-cm2.</p> |
| 申请公布号 |
KR20070042976(A) |
申请公布日期 |
2007.04.24 |
| 申请号 |
KR20077001556 |
申请日期 |
2005.07.27 |
| 申请人 |
CREE INC. |
发明人 |
RAFFETTO MARK;BHARATHAN JAYESH;HABERERN KEVIN;BERGMANN MICHAEL;EMERSON DAVID;IBBETSON JAMES;LI TING |
| 分类号 |
H01L33/42 |
主分类号 |
H01L33/42 |
| 代理机构 |
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