发明名称 |
Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy |
摘要 |
A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.
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申请公布号 |
US7208393(B2) |
申请公布日期 |
2007.04.24 |
申请号 |
US20050140893D |
申请日期 |
2005.05.31 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
HASKELL BENJAMIN A.;MCLAURIN MELVIN B.;DENBAARS STEVEN P.;SPECK JAMES STEPHEN;NAKAMURA SHUJI |
分类号 |
H01L21/36;H01L21/20 |
主分类号 |
H01L21/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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