发明名称 |
Transistor with notched gate |
摘要 |
A transistor having a gate electrode with a T-shaped cross section is fabricated from a single layer of conductive material using an etching process. A two process etch is performed to form side walls having a notched profile. The notches allow source and drain regions to be implanted in a substrate and thermally processed without creating excessive overlap capacitance with the gate electrode. The reduction of overlap capacitance increases the operating performance of the transistor, including drive current.
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申请公布号 |
US7208399(B2) |
申请公布日期 |
2007.04.24 |
申请号 |
US20040897351 |
申请日期 |
2004.07.22 |
申请人 |
INTEL CORPORATION |
发明人 |
CHU CHARLES;LETSON THOMAS A. |
分类号 |
H01L21/302;H01L21/3205;H01L21/28;H01L21/3065;H01L21/3213;H01L21/336;H01L29/423;H01L29/78 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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