发明名称 |
Write-protection blocks for non-volatile semiconductor memory device |
摘要 |
A non-volatile semiconductor memory device and/or a data processing system include a non-volatile memory array having a plurality of memory blocks and a write-protection control circuit that controls access to blocks of memory based on a start block address and an end block address. The write-protection control circuit may store start and end block addresses of an unlock region of the non-volatile memory array, and selectively activate a write enable signal according to the relationship between a write address and the start and end block addresses.
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申请公布号 |
US7210012(B2) |
申请公布日期 |
2007.04.24 |
申请号 |
US20030417770 |
申请日期 |
2003.04.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JIN-YUB;LEE SEOK-HEON;CHOI YOUNG-JOON |
分类号 |
G06F12/14;G11C16/00;G06F12/00;G06F12/16;G11C16/02;G11C16/06 |
主分类号 |
G06F12/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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