发明名称 Write-protection blocks for non-volatile semiconductor memory device
摘要 A non-volatile semiconductor memory device and/or a data processing system include a non-volatile memory array having a plurality of memory blocks and a write-protection control circuit that controls access to blocks of memory based on a start block address and an end block address. The write-protection control circuit may store start and end block addresses of an unlock region of the non-volatile memory array, and selectively activate a write enable signal according to the relationship between a write address and the start and end block addresses.
申请公布号 US7210012(B2) 申请公布日期 2007.04.24
申请号 US20030417770 申请日期 2003.04.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE JIN-YUB;LEE SEOK-HEON;CHOI YOUNG-JOON
分类号 G06F12/14;G11C16/00;G06F12/00;G06F12/16;G11C16/02;G11C16/06 主分类号 G06F12/14
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