发明名称 |
Method of forming a polycrystalline silicon layer |
摘要 |
A method of forming a polycrystalline silicon layer. An amorphous silicon layer on a substrate is completely melted using a laser beam passed through a mask so as to form a polycrystalline silicon layer. The upper portion of the polycrystalline silicon layer is then re-melted and re-crystallized using a laser beam passed through a mask. The mask includes a high transmittance region for completely melting the amorphous silicon layer and a low transmittance region for re-melting the upper portion of the polycrystalline silicon layer.
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申请公布号 |
US7208696(B2) |
申请公布日期 |
2007.04.24 |
申请号 |
US20040002274 |
申请日期 |
2004.12.03 |
申请人 |
LG.PHILIPS LCD CO., LTD |
发明人 |
YANG MYOUNG-SU |
分类号 |
B23K26/00;B23K26/06;H01L21/00;H01L21/20;H01L21/336;H01L21/77;H01L29/786 |
主分类号 |
B23K26/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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