发明名称 Bonded substrate, surface acoustic wave chip, and surface acoustic wave device
摘要 A bonded substrate includes a lithium tantalate substrate and a sapphire substrate to which the lithium tantalate substrate is bonded, a bonded interface of the lithium tantalate and the sapphire substrate includes a bonded region in an amorphous state having a thickness of 0.3 nm to 2.5 nm. The bonded region in the amorphous state is formed by activating at least one of the lithium tantalate substrate and the sapphire substrate in the bonded interface with neutralized atom beams, ion beams or plasma of inert gas or oxygen. It is possible to bond the piezoelectric substrate to the supporting substrate having different lattice constants without the high-temperature thermal treatment and realize the bonded substrate having an excellent bonding strength and being less warped.
申请公布号 US7208859(B2) 申请公布日期 2007.04.24
申请号 US20050069048 申请日期 2005.03.02
申请人 FUJITSU LIMITED 发明人 MIURA MICHIO;UEDA MASANORI;AIKAWA SHUNICHI;UEMURA TORU;WADA KUNIHISA;MISHIMA NAOYUKI
分类号 H01L41/09;H03H9/25;H01L41/053;H01L41/18;H01L41/22;H03H9/02 主分类号 H01L41/09
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