发明名称 SOI substrate and manufacturing method thereof
摘要 An active layer wafer having a larger diameter is placed over a stationary supporting substrate wafer having a smaller diameter. A pusher plate is pressed against an orientation flat of the larger wafer to move the wafer substantially in the horizontal direction. In the course of the pressing operation, the pusher plate is also pressed against the orientation flat of the smaller wafer so as to move the two wafers together. Then, as a result of each of the cut sections for alignment of the wafer being pressed against an aligning plate, the larger wafer and the smaller wafer can be bonded to each other with their centerlines and orientation flats aligned with respect to each other.
申请公布号 US7208058(B2) 申请公布日期 2007.04.24
申请号 US20040862439 申请日期 2004.06.08
申请人 SUMITOMO MITSUBISHI SILICON CORPORATION 发明人 TOMITA SHINICHI
分类号 B32B41/00;H01L21/68;G11C29/00;H01L21/02;H01L21/762;H01L23/544 主分类号 B32B41/00
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