发明名称 |
Semiconductor device having STI without divot and its manufacture |
摘要 |
The method of manufacturing a semiconductor device has the steps of: etching a semiconductor substrate to form an isolation trench by using as a mask a pattern including a first silicon nitride film and having a window; depositing a second silicon nitride film covering an inner surface of the isolation trench; forming a first silicon oxide film burying the isolation trench; etching and removing the first silicon oxide film in an upper region of the isolation trench; etching and removing the exposed second silicon nitride film; chemical-mechanical-polishing the second silicon oxide film; and etching and removing the exposed first silicon nitride film.
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申请公布号 |
US7208812(B2) |
申请公布日期 |
2007.04.24 |
申请号 |
US20030721080 |
申请日期 |
2003.11.26 |
申请人 |
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发明人 |
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分类号 |
H01L21/76;H01L29/00;H01L21/336;H01L21/762;H01L21/8234 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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