Interface improvement by stress application during oxide growth through use of backside films

摘要

The present invention provides, in one aspect, a method of fabricating a gate oxide layer on a microelectronics substrate. This embodiment comprises forming a stress inducing pattern on a backside of a microelectronics wafer and growing a gate oxide layer on a front side of the microelectronics wafer in the presence of a tensile stress caused by the stress inducing pattern.