发明名称 RECESSED CONTACT TO SEMICONDUCTOR NANOWIRES
摘要 A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.
申请公布号 EP2936568(A4) 申请公布日期 2016.07.20
申请号 EP20130865741 申请日期 2013.12.06
申请人 SOL VOLTAICS AB 发明人 ÅBERG, INGVAR;MAGNUSSON, MARTIN;ASOLI, DAMIR;SAMUELSON, LARS IVAR;OHLSSON, JONAS
分类号 H01L31/068;B82Y10/00;H01L21/283;H01L29/45;H01L31/0224;H01L31/0693;H01L33/06 主分类号 H01L31/068
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