| 摘要 |
A drain-extended metal-oxide-semiconductor transistor ( 40 ) with improved robustness in breakdown characteristics is disclosed. Field oxide isolation structures ( 29 c) are disposed between the source region ( 30 ) and drain contact regions ( 32 a , 32 b , 32 c) to break the channel region of the transistor into parallel sections. The gate electrode ( 35 ) extends over the multiple channel regions, and the underlying well ( 26 ) and thus the drift region (DFT) of the transistor extends along the full channel width. Channel stop doped regions ( 33 ) underlie the field oxide isolation structures ( 29 c), and provide conductive paths for carriers during breakdown. Parasitic bipolar conduction, and damage due to that conduction, is therefore avoided.
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