发明名称 |
Replacement gate process for making a semiconductor device that includes a metal gate electrode |
摘要 |
A method for making a semiconductor device is described. That method comprises forming a polysilicon layer on a dielectric layer, which is formed on a substrate. The polysilicon layer is etched to generate a patterned polysilicon layer with an upper surface that is wider than its lower surface. The method may be applied, when using a replacement gate process to make transistors that have metal gate electrodes.
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申请公布号 |
US7208361(B2) |
申请公布日期 |
2007.04.24 |
申请号 |
US20040809853 |
申请日期 |
2004.03.24 |
申请人 |
INTEL CORPORATION |
发明人 |
SHAH UDAY;BARNS CHRIS E.;DOCZY MARK L.;BRASK JUSTIN K.;KAVALIEROS JACK;METZ MATTHEW V.;CHAU ROBERT S. |
分类号 |
H01L21/8238;H01L21/00;H01L21/336;H01L21/4763;H01L21/84;H01L27/10 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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