发明名称 |
Methods of bridging lateral nanowires and device using same |
摘要 |
A semiconductor nanowire is grown laterally. A method of growing the nanowire forms a vertical surface on a substrate, and activates the vertical surface with a nanoparticle catalyst. A method of laterally bridging the nanowire grows the nanowire from the activated vertical surface to connect to an opposite vertical surface on the substrate. A method of connecting electrodes of a semiconductor device grows the nanowire from an activated device electrode to an opposing device electrode. A method of bridging semiconductor nanowires grows nanowires between an electrode pair in opposing lateral directions. A method of self-assembling the nanowire bridges the nanowire between an activated electrode pair. A method of controlling nanowire growth forms a surface irregularity in the vertical surface. An electronic device includes a laterally grown nano-scale interconnection.
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申请公布号 |
US7208094(B2) |
申请公布日期 |
2007.04.24 |
申请号 |
US20030738176 |
申请日期 |
2003.12.17 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
ISLAM M. SAIF;KAMINS THEODORE I.;SHARMA SHASHANK |
分类号 |
C23F1/00;D01F9/127;H01L21/00;H01L21/768;H01L23/532;H01L51/30 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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