FABRICATION METHOD OF A FLASH MEMORY DEVICE INCLUDING A TUNNEL INSULATION LAYER HAVING A UNIFORM THICKNESS,申请号KR20050098280-传众专利搜索

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发明名称	FABRICATION METHOD OF A FLASH MEMORY DEVICE INCLUDING A TUNNEL INSULATION LAYER HAVING A UNIFORM THICKNESS
摘要
申请公布号	KR20070042395(A)	申请公布日期	2007.04.23
申请号	KR20050098280	申请日期	2005.10.18
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	KIM, BONG HYUN;SHIN, SEUNG MOK;KIM, BUM SU;KANG, MAN SUG;YOO, WON SEOK;SHIN, HYUN JIN;LEE, YONG SUN
分类号	H01L27/115	主分类号	H01L27/115
代理机构		代理人
主权项
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