| 发明名称 | Semiconductor device manufacturing method and related semiconductor wafer | ||
| 摘要 | A method for processing a wafer (in a process of manufacturing semiconductor devices) may include the following steps: using a first slurry set to perform a first chemical mechanical polishing process on the wafer, wherein the wafer includes a plurality of metal gate structures; using a second slurry set to perform a second chemical mechanical polishing process on the wafer, wherein a concentration of a slurry material in the second slurry set is less than a concentration of the slurry material in the first slurry set; performing a cleaning process on the wafer; and providing an anti-reflective coating on the wafer. | ||
| 申请公布号 | US9406527(B2) | 申请公布日期 | 2016.08.02 |
| 申请号 | US201514810111 | 申请日期 | 2015.07.27 |
| 申请人 | Semiconductor Manufacturing International (Shanghai) Corporation | 发明人 | Yang Jun;Jiang Li;Li Mingqi;Zhu Pulei;Li Xiantao |
| 分类号 | H01L21/321;H01L27/088;H01L21/02;H01L21/306 | 主分类号 | H01L21/321 |
| 代理机构 | Innovation Counsel LLP | 代理人 | Innovation Counsel LLP |
| 主权项 | 1. A method for processing a wafer in a process of manufacturing semiconductor devices, the method comprising: using a first slurry set to perform a first chemical mechanical polishing process on the wafer, wherein the wafer includes a plurality of metal gate structures; using a second slurry set to perform a second chemical mechanical polishing process on the wafer, wherein a concentration of a slurry material in the second slurry set is less than a concentration of the slurry material in the first slurry set; providing a set of hydrogen peroxide onto the polishing pad when the second slurry set is being provided onto the polishing pad, wherein the hydrogen peroxide is provided at a flow rate greater than the flow rate at which the second slurry is provided; performing a cleaning process on the wafer; and providing an anti-reflective coating on the wafer. | ||
| 地址 | CN | ||