发明名称 |
Method for patterning mesoporous inorganic oxide film, and electric device including mesoporous inorganic oxide film patterned by the same |
摘要 |
Provided are a method for patterning a mesoporous inorganic oxide film, the method including a step of forming a mesoporous inorganic oxide film using a composition containing inorganic oxide particles; and a step of forming a pattern on the mesoporous inorganic oxide film using an elastic stamp for pattern formation, and then calcining the mesoporous inorganic oxide, and an electronic device including a mesoporous inorganic oxide film that has been patterned by the patterning method. |
申请公布号 |
US9406447(B2) |
申请公布日期 |
2016.08.02 |
申请号 |
US201313935469 |
申请日期 |
2013.07.03 |
申请人 |
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY |
发明人 |
Kim Eun Kyoung;Kim Jong Hak;Kim Jeong Hun;Koh Jong Kwan;Na Jong Beom;Park Chi Hyun |
分类号 |
H01L21/31;H01G9/20;H01L29/78;H01G9/00;H01L51/05 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
1. A method for producing a photoelectrode, the method comprising:
forming a mesoporous inorganic oxide layer on a conductive substrate using a composition containing neutral mesoporous inorganic oxide particles; forming a pattern on the mesoporous inorganic oxide layer using an elastic stamp for pattern formation; adsorbing a dye to the mesoporous inorganic oxide layer on which the pattern is formed and injecting a hole transfer material into the mesoporous inorganic oxide layer in which the dye is adsorbed. |
地址 |
KR |