发明名称 Method for patterning mesoporous inorganic oxide film, and electric device including mesoporous inorganic oxide film patterned by the same
摘要 Provided are a method for patterning a mesoporous inorganic oxide film, the method including a step of forming a mesoporous inorganic oxide film using a composition containing inorganic oxide particles; and a step of forming a pattern on the mesoporous inorganic oxide film using an elastic stamp for pattern formation, and then calcining the mesoporous inorganic oxide, and an electronic device including a mesoporous inorganic oxide film that has been patterned by the patterning method.
申请公布号 US9406447(B2) 申请公布日期 2016.08.02
申请号 US201313935469 申请日期 2013.07.03
申请人 INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY 发明人 Kim Eun Kyoung;Kim Jong Hak;Kim Jeong Hun;Koh Jong Kwan;Na Jong Beom;Park Chi Hyun
分类号 H01L21/31;H01G9/20;H01L29/78;H01G9/00;H01L51/05 主分类号 H01L21/31
代理机构 代理人
主权项 1. A method for producing a photoelectrode, the method comprising: forming a mesoporous inorganic oxide layer on a conductive substrate using a composition containing neutral mesoporous inorganic oxide particles; forming a pattern on the mesoporous inorganic oxide layer using an elastic stamp for pattern formation; adsorbing a dye to the mesoporous inorganic oxide layer on which the pattern is formed and injecting a hole transfer material into the mesoporous inorganic oxide layer in which the dye is adsorbed.
地址 KR