发明名称 Sense amplifiers, memories, and apparatuses and methods for sensing a data state of a memory cell
摘要 Sense amplifiers, memories, and apparatuses and methods for sensing a data state of a memory cell are disclosed. An example apparatus includes a differential amplifier configured to amplify a voltage difference between voltages applied to first and second amplifier input nodes to provide an output. The example apparatus further includes first and second capacitances coupled to the first and second amplifier input nodes. A switch block coupled to the first and second capacitances is configured to couple during a first phase a reference input node to the first and second capacitances and to the first amplifier input node. The switch block is further configured to couple during the first phase an output of the amplifier to the second amplifier input node to establish a compensation condition. During a second phase, the switch block couples its input nodes to the first and second capacitances.
申请公布号 US9406353(B2) 申请公布日期 2016.08.02
申请号 US201414333164 申请日期 2014.07.16
申请人 Micron Technology, Inc. 发明人 Vimercati Daniele
分类号 G11C7/06;H03F3/45;G11C7/08;G11C7/12 主分类号 G11C7/06
代理机构 Dorsey & Whitney LLP 代理人 Dorsey & Whitney LLP
主权项 1. A method, comprising: pre-charging a sense amplifier with a pre-charge voltage; establishing a compensation voltage across inputs of a differential amplifier during a pre-charge phase of the sense amplifier, wherein establishing the compensation voltage across inputs of the differential amplifier comprises: coupling a reference voltage to first and second nodes of a first capacitance coupled to the differential amplifier, a non-inverting input of the differential amplifier coupled to the second node of the first capacitance;coupling the reference voltage to a first node of a second capacitance coupled to the differential amplifier, an inverting input of the differential amplifier coupled to a second node of the second capacitance; andcoupling an output of the differential amplifier to the second node of the second capacitance; and evaluating a data state of a memory cell coupled to the sense amplifier.
地址 Boise ID US