| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent the generation of spark discharges, while maintaining both sufficient electrostatic attraction force and high throughput of a vacuum treatment equipment. SOLUTION: A pressure in a vacuum chamber 1 is maintained at most 2Pa. A wafer-elevating pin 22 makes a wafer W descend. When the interval H between the wafer W and an electrode 12 of an electrostatic chuck equipment 11 becomes equal to or smaller than 5mm, a DC power source 16 applies a DC high voltage of 3000V to the electrode 12. After that, the wafer-elevating pin 22 mounts the wafer W on the electrostatic chuck equipment 11, so that the electrostatic chuck equipment 11 attracts the wafer W electrostatically. Since the DC high voltage is applied after the interval H becomes equal to or smaller than 5mm, generation of speak discharges is prevented.</p> |
