TRENCHED GATE WITH SIDEWALL AIRGAP SPACER

摘要

A method for fabricating a semiconductor device may include receiving a device substrate comprising a channel layer and a source or drain layer, forming a gate trench within the source or drain layer of the device substrate, depositing a gate dielectric layer and one or more additional gate layers onto the bottom and sidewalls of the gate trench, and removing a substantial portion of at least the gate dielectric layer from the sidewalls of the gate trench to form a left and a right sidewall airgap adjacent to the sidewalls of the gate trench. A corresponding semiconductor device may include a device substrate comprising a channel layer and a source or drain layer, a gate trench formed within the source or drain layer of the device substrate and a sidewall airgap formed adjacent to the sidewalls of the gate trench.

主权项

1. A method comprising:
receiving a device substrate comprising a channel layer, and a source or drain layer; forming a gate trench within the source or drain layer of the device substrate; depositing a gate dielectric layer onto the bottom and sidewalls of the gate trench to form a narrower and shallower trench; depositing one or more conductive gate layers onto the bottom and sidewalls of the narrower and shallower trench; and removing a substantial portion of at least the gate dielectric layer from the sidewalls of the gate trench to form a left and a right sidewall airgap adjacent to the sidewalls of the gate trench.