Floating integrated photodiode

摘要

The circuit has a photodiode with a burial layer located below a floating substrate and an upper layer located on the substrate. The upper layer incorporates source and drain regions formed on both sides of a rectangular gate (G) of a readout transistor (TR). A deep isolating trench (DT1) is located near the source region and extends from an upper surface of the upper layer and above the burial layer to insulate the source region from the burial layer. A shallow isolating trench (ST1) is located between the drain region and the photodiode and traverses the upper layer.