CASCODE CONNECTED SIC-JFET WITH SIC-SBD AND ENHANCEMENT DEVICE

摘要

An apparatus that includes a first device connected to an inductor. The first device includes a first silicon carbide (SiC) junction gate field-effect transistor (JFET), a first SiC schottky barrier diode (SBD) connected to a gate and a drain of the first SiC JFET, and a first silicon (Si) transistor connected to transmit current to a source of the first SiC JFET. An inductor input terminal is connected to the drain of the first SiC JFET.

主权项

1. An apparatus comprising:
an inductor comprising an input terminal and an output terminal; a first device comprising: a first silicon carbide (SiC) junction gate field-effect transistor (JFET), and; a first SiC schottky barrier diode (SBD) connected to a gate and a drain of the first SiC JFET; a first silicon (Si) transistor connected to transmit current to a source of the first SiC JFET; wherein the inductor input terminal is connected to the drain of the first SiC JFET.