ALIGNED CARBON NANOTUBES FOR USE IN HIGH PERFORMANCE FIELD EFFECT TRANSISTORS

摘要

High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors (FETs) that incorporate the films as conducting channel materials. The single-walled carbon nanotubes are deposited from a thin layer of organic solvent containing solubilized single-walled carbon nanotubes that is spread over the surface of an aqueous medium, inducing evaporative self-assembly upon contacting a solid substrate.

主权项

1. A film comprising aligned s-SWCNTs, wherein the s-SWCNTs in the film have a degree of alignment of about ±15° or better and the single-walled carbon nanotube linear packing density in the film is at least 40 single-walled carbon nanotubes/μm.