| 摘要 |
The present invention provides a quality determination method of a silicon wafer, whereby whether or not slip dislocation is generated after heat treatment in the process of manufacturing a device can be determined with high precision; a method for manufacturing a silicon wafer using the same method; and a silicon wafer. The quality determination method of a silicon wafer comprises the steps of: obtaining the size of oxygen precipitate and the concentration of remaining oxygen after heat treatment in the process of manufacturing a device with respect to a silicon wafer (step S2); obtaining critical tip stress _cri, whereby slip dislocation is generated in the silicon wafer in the process of manufacturing a device, based on the obtained size of oxygen precipitate and the concentration of remaining oxygen (step S3); and comparing the obtained critical tip stress _cri with thermal stress applied to the silicon wafer in heat treatment in the process of manufacturing a device, thereby determining that slip dislocation is generated in the silicon wafer in the process of manufacturing a device if the thermal stress is greater than or equal to the critical tip stress _cri, and determining that slip dislocation is not generated in the silicon wafer in the process of manufacturing a device if the thermal stress is smaller than the critical tip stress _cri (step S4). |
