Phase change memory structures and methods

摘要

A method of forming a phase change material memory cell includes forming a number of memory structure regions, wherein the memory structure regions include a bottom electrode material and a sacrificial material, forming a number of insulator regions between the number of memory structure regions, forming a number of openings between the number of insulator regions and forming a contoured surface on the number of insulator regions by removing the sacrificial material and a portion of the number of insulator regions, forming a number of dielectric spacers on the number of insulator regions, forming a contoured opening between the number of insulator regions and exposing the bottom electrode material by removing a portion of the number of dielectric spacers, and forming a phase change material in the opening between the number of insulator regions.

主权项

1. A memory cell, comprising:
a phase change material between a first electrode and a second electrode, wherein the phase change material includes contoured sidewalls that contact a first spacer and a second spacer, wherein the first and second spacers include contoured sidewalls, wherein the first spacer is in contact with a first insulator region and the second spacer is in contact with a second insulator region, wherein the first insulator region includes a first contoured sidewall and a second contoured sidewall and the second insulator region includes a third contoured sidewall, and wherein an adjacent memory cell is formed between the second contoured sidewall of the first insulator region and a third insulator region.