Method of fabricating a flip chip light emitting diode (FCLED) die having N-conductor layer

摘要

A method for fabricating a flip chip light emitting diode (FCLED) die includes forming an epitaxial stack on a carrier substrate having an n-type confinement layer, a multiple quantum well (MQW) layer, and a p-type confinement layer, forming a mirror layer on the p-type confinement layer, forming an n-trench in the n-type confinement layer, forming an n-conductor layer in the n-trench on the n-type confinement layer, forming a p-metal layer on the p-type confinement layer, forming a first electrical isolator layer on the n-conductor layer and a second electrical isolator layer on the p-metal layer, forming a p-pad on the first electrical isolator layer, and forming an n-pad the second electrical isolator layer.

主权项

1. A method for fabricating a flip chip light emitting diode (FCLED) die comprising:
forming an epitaxial stack on a carrier substrate having an n-type confinement layer, a multiple quantum well (MQW) layer on the n-type confinement layer configured to emit electromagnetic radiation, and a p-type confinement layer on the multiple quantum well (MQW) layer; forming a mirror layer on the p-type confinement layer; forming an n-conductor layer on the n-type confinement layer and a p-metal layer on the p-type confinement layer; forming a first electrical isolator layer on the n-conductor layer and a second electrical isolator layer on the p-metal layer; forming a p-pad on the first electrical isolator layer electrically isolated from the n-conductor layer by the first electrical isolator layer; and forming an n-pad on the second electrical isolator layer in electrical contact with the n-conductor layer and electrically isolated from the p-metal layer by the second electrical isolator layer.