Photoelectric conversion device

摘要

A photoelectric conversion device in photoelectric conversion in a light-absorption region in a crystalline silicon substrate is efficiently performed is provided. In the photoelectric conversion device, a light-transmitting conductive film which has a high effect of passivation of defects on a silicon surface and improves the reflectance on a back electrode side is provided between the back electrode and the crystalline silicon substrate, The light-transmitting conductive film includes an organic compound and an inorganic compound. The organic compound includes 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine. The inorganic compound includes an oxide of a metal belonging to any of Groups 4 to 8 of the periodic table.

主权项

1. A photoelectric conversion device comprising:
a crystalline silicon substrate including a first surface and a second surface opposite to the first surface, wherein an impurity region is included in a first surface side of the crystalline silicon substrate; a first electrode over the impurity region; a light-transmitting conductive film in contact with the second surface of the crystalline silicon substrate; and a second electrode in contact with the light-transmitting conductive film, wherein the light-transmitting conductive film comprises an organic compound and an inorganic compound, wherein the organic compound is 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), wherein the inorganic compound is an oxide of a metal belonging to any of Groups 4 to 8 of the periodic table, and wherein the light-transmitting conductive film is a reflection film.