High-density power MOSFET with planarized metalization

摘要

A method for producing a power MOSFET. The method includes fabricating a plurality of layers of a power MOSFET to produce an upper surface active area and performing a chemical mechanical polishing process on the active area to produce a substantially planar surface. A metalization deposition process is then performed on the substantially planar surface and the fabrication of the power MOSFET is subsequently completed.

主权项

1. A method for producing a power MOSFET, comprising:
fabricating a plurality of layers of a power MOSFET and an integrated Schottky device to produce an upper surface active area; performing a chemical mechanical polishing process on the upper surface active area to produce a substantially planar surface, wherein a gate contact is coplanar with an oxide deposit, wherein the oxide deposit comprises a source region, and wherein the oxide deposit comprises a drain region; performing a metalization deposition process on the substantially planar surface, wherein a portion of the metallization deposition is in contact with the gate contact; and completing fabrication of the power MOSFET and Schottky device.