Reverse-conducting IGBT with buffer layer and separation layer for reducing snapback

摘要

In the reverse-conducting IGBT according to the present invention, an n-type buffer layer surrounds a p-type collector layer. A p-type separation layer surrounds an n-type cathode layer. The n-type buffer layer separates the p-type collector layer and the p-type separation layer from each other. The p-type separation layer separates the n-type cathode layer and the n-type buffer layer from each other. Therefore, the present invention makes it possible to reduce snapback.

主权项

1. A semiconductor device comprising:
an n-type drift layer; a p-type base layer in a channel region on the n-type drift layer; an n-type emitter layer on the p-type base layer; a trench-gate electrode penetrating the p-type base layer and the n-type emitter layer and being in contact with the p-type base layer and the n-type emitter layer through a gate insulating film; a p-type anode layer in a region other than the channel region on the n-type drift layer; an emitter electrode connected to the n-type emitter layer and the p-type anode layer; a p-type collector layer below the n-type drift layer; an n-type cathode layer below the n-type drift layer; a collector electrode connected to the p-type collector layer and the n-type cathode layer; an n-type buffer layer provided between the n-type drift layer and the p-type collector layer; a p-type separation layer provided between the n-type drift layer and the n-type cathode layer; and an embedded oxide film separating the p-type collector layer and the p-type separation layer from each other and separating the n-type cathode layer and the n-type buffer layer from each other.