发明名称 Adaptive program pulse duration based on temperature
摘要 Techniques are provided for reducing program disturb in a memory device. The techniques include compensating for a temperature in the memory device to reduce the upshift in the threshold voltage (Vth) of erased-state memory cells. A minimum allowable program pulse duration increases with temperature to account for an increase in the attenuation of a program pulse along a word line. A program pulse duration which accounts for reduced channel boosting at relatively high temperatures is reduced as the temperature increases. An optimum program pulse duration is based on the larger of these durations. The optimum program pulse duration can also be based on factors such as a measure of program disturb or a memory hole width. Program disturb can also be reduced by easing the requirements of a verify test for the highest data state.
申请公布号 US9437318(B2) 申请公布日期 2016.09.06
申请号 US201414522901 申请日期 2014.10.24
申请人 SanDisk Technologies LLC 发明人 Dong Yingda;Yuan Jiahui;Chen Jian
分类号 G11C11/34;G11C16/34;G11C16/10 主分类号 G11C11/34
代理机构 Vierra Magen Marcus LLP 代理人 Vierra Magen Marcus LLP
主权项 1. A method for operating a memory device, comprising: obtaining data indicating a temperature of the memory device; determining a program pulse duration which is at least as long as a minimum allowable program pulse duration, the minimum allowable program pulse duration is relatively long when the temperature is relatively high and compensates for a temperature-based change in a time constant of a selected word line in the memory device; programming a set of memory cells connected to the selected word line using program pulses having the program pulse duration, wherein the set of memory cells comprises memory cells which are to be programmed to a highest target data state of a plurality of target data states by the programming; and adjusting a bit ignore number for the highest target data state based on the temperature, wherein the bit ignore number is relatively high when the temperature is relatively high, and the bit ignore number is a number of the memory cells which are to be programmed to the highest target data state which are permitted to fail a verify test of the highest target data state while still allowing the programming to be successfully completed.
地址 Plano TX US