SEMICONDUCTOR DEVICE

摘要

According to an embodiment, a semiconductor device includes a semiconductor layer, a first metal layer formed over the semiconductor layer, a barrier film formed over the first metal layer and having an ionization tendency lower than an ionization tendency of the first metal layer, a second metal layer formed over the barrier film and having an ionization tendency higher than an ionization tendency of the metal film, and a third metal layer formed over the second metal layer and having an ionization tendency lower than an ionization tendency of the second metal layer.

主权项

1. A semiconductor device, comprising:
a semiconductor layer; a first metal layer on the semiconductor layer; a barrier film on the first metal layer and having an ionization tendency lower than an ionization tendency of the first metal layer; a second metal layer formed on the barrier film and having an ionization tendency higher than the ionization tendency of the barrier film; and a third metal layer on the second metal layer and having an ionization tendency lower than the ionization tendency of the second metal layer.