| 发明名称 |
SEMICONDUCTOR DEVICE WITH LOW BAND-TO-BAND TUNNELING |
| 摘要 |
The invention includes a semiconductor device comprising an interlevel dielectric layer over a buried insulator layer over a semiconductor substrate; a source and drain in the interlevel layer; a channel between the source and drain, the channel including a first region having a first bandgap adjacent to a second region having a second bandgap, wherein the first band gap is larger than the second bandgap; and a gate over the channel. |
| 申请公布号 |
US2016260740(A1) |
申请公布日期 |
2016.09.08 |
| 申请号 |
US201514636523 |
申请日期 |
2015.03.03 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Degors Nicolas;Hook Terence B. |
| 分类号 |
H01L27/12;H01L29/165;H01L29/78;H01L21/02;H01L27/092;H01L21/84;H01L21/762;H01L29/06;H01L29/10 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
an interlevel dielectric layer on a buried insulator layer over a semiconductor substrate; a source and a drain in the interlevel dielectric layer; a channel between the source and drain, the channel including a first region having a first bandgap adjacent to a second region having a second bandgap, wherein the first bandgap is larger than the second bandgap; and a gate over the channel. |
| 地址 |
Armonk NY US |
