Method of forming local interconnects and conductive lines, and resulting structure

摘要

The invention relates to a method of forming a local interconnect (57). The method comprises forming at least two transistor gates (22, 26) over a semiconductor substrate (12). A local interconnect layer (56) is deposited to overlie at least one of the transistor gates (22, 26) and interconnect at least one source/drain region (42) proximate one of the transistor gates (22) with semiconductor substrate material (12) proximate another of the transistor gates (26). Conductivity enhancing impurity is implanted through the local interconnect layer (56) into semiconductor substrate material (12) therebeneath.