发明名称
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition reduced in surface roughness in etching and a positive resist composition excellent also in resolving power and defocus latitude in contact hole pattern formation. <P>SOLUTION: The positive resist composition comprises: a resin (A) containing two specified repeating units having an alicyclic group and having a velocity of dissolution in an alkali developing solution increased by the action of an acid; and a compound (B) which generates an acid upon irradiation with an active light or a radiation. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP3907171(B2) 申请公布日期 2007.04.18
申请号 JP20020032449 申请日期 2002.02.08
申请人 发明人
分类号 G03F7/039;H01L21/027 主分类号 G03F7/039
代理机构 代理人
主权项
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