| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device which performs stable reading-out with little degradation and easily improves integration degree. <P>SOLUTION: The semiconductor memory device is provided with a volatile latch circuit SRAM which holds data, a nonvolatile ferroelectric capacitor circuit NVC which holds data, and a switching circuit SW which cuts and connects the latch circuit SRAM and the ferroelectric capacitor circuit NVC. The switching circuit SW is connected only when inputting and outputting data between the latch circuit SRAM and the ferroelectric capacitor circuit NVC. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
