发明名称 Semiconductor integrated circuit
摘要 A difference between both emitter voltages of a first transistor having an emitter through which a first current flows, and at least one second transistor having an emitter through which such a second current as to reach a current density thereof smaller than that of the emitter of the first transistor flows, is applied across a first resistor. A second resistor is provided between the emitter of the second transistor and a circuit's ground potential. A third resistor and a fourth resistor are respectively provided between collectors of the first and second transistors and a power supply voltage. Such an output voltage that a collector voltage of the first transistor and a collector voltage of the second transistor become equal is formed in response to the collector voltage of the first transistor and the collector voltage of the second transistor and supplied to bases of the first and second transistors in common. A temperature sense voltage is formed from a connecting point of the first and second resistors.
申请公布号 US7205755(B2) 申请公布日期 2007.04.17
申请号 US20060390276 申请日期 2006.03.28
申请人 RENESAS TECHNOLOGY CORP. 发明人 ITO TAKAYASU;HIRAKI MITSURU;HORIGUCHI MASASHI;KAMEYAMA TADASHI
分类号 G05F3/16 主分类号 G05F3/16
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