发明名称 |
Anti-scattering attenuator structure for high energy particle radiation into integrated circuits |
摘要 |
A microelectronics device including a semiconductor device located at least partially over a substrate, a bombarded area located at least partially over the substrate and adjacent the semiconductor device, and a bombarded attenuator interposing the semiconductor device and the bombarded area.
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申请公布号 |
US7205632(B2) |
申请公布日期 |
2007.04.17 |
申请号 |
US20040818009 |
申请日期 |
2004.04.05 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN WEN-CHIN;TANG DENNY D.;WANG CHAO-HSIUNG |
分类号 |
H01L29/00;G01J1/42;H01L27/06;H01L27/08 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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