发明名称 Thyristor structure and overvoltage protection configuration having the thyristor structure
摘要 A thyristor structure having a first terminal, formed as a first region with a first conductivity type, is provided. A second region of a second conductivity type adjoins the first region. A third region of the first conductivity type, which adjoins the second region, has a common surface with the latter. A second terminal, as fourth region of the second conductivity type, adjoins the third region. At the common surface of the second region and the third region, an auxiliary electrode is disposed in a manner adjoining at least one of the two regions.
申请公布号 US7205581(B2) 申请公布日期 2007.04.17
申请号 US20030657899 申请日期 2003.09.09
申请人 INFINEON TECHNOLOGIES AG 发明人 PETERS CHRISTIAN
分类号 H01L29/74;H01L21/822;H01L27/02;H01L27/04;H01L27/06;H01L29/87 主分类号 H01L29/74
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