Method of fabricating crystalline silicon and switching device using crystalline silicon

摘要

A method of forming a crystalline silicon layer that includes forming a semiconductor layer of amorphous silicon on a substrate having a first region and a second region at a periphery of the first region; forming at least one concave-shaped alignment key by irradiating a laser beam onto the semiconductor layer in the second region; and crystallizing the semiconductor layer in the first region using the at least one alignment key.