发明名称 |
Semiconductor device having internal stress film |
摘要 |
A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.
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申请公布号 |
US7205615(B2) |
申请公布日期 |
2007.04.17 |
申请号 |
US20040859219 |
申请日期 |
2004.06.03 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
TSUTSUI MASAFUMI;UMIMOTO HIROYUKI;AKAMATSU KAORI |
分类号 |
H01L29/76;H01L21/8238;H01L27/092;H01L29/78;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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