Chemical mechanical polish of PCMO thin films for RRAM applications

摘要

A method of fabricating a CMR layer in a CMOS device using CMP to pattern the CMR layer includes preparing a silicon substrate, including fabrication of a bottom electrode in the silicon substrate; depositing a layer of SiN_x on the substrate; patterning and etching the SiN_x layer to form a damascene trench over the bottom electrode; depositing a layer CMR material over the SiN_x and in the damascene trench; removing the CMR material overlying the SiN_x layer by CMP, leaving the CMR material in the damascene trench; and completing the CMOS structure.